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TPCP8101
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS III)
TPCP8101
Notebook PC Applications Portable Equipment Applications
* * * * * Small footprint due to small and thin package
2.40.1 0.475
1 4
Unit: mm
0.330.05 0.05 M A
8 5
High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A)
S
0.65 2.90.1
B A
0.05 M B
0.80.05
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 8 -5.6 -22.4 1.68 0.84 20.3 -5.6 0.168 150 -55~150 Unit V V V A W W mJ A mJ C C
0.025
S
0.170.02
0.28 +0.1 -0.11
+0.13
1.12 -0.12
1.12 +0.13 -0.12 0.28 +0.1 -0.11
1. Source 2. Source 3. Source 4. Gate
5. Drain 6. Drain 7. Drain 8. Drain
Drain power dissipation Drain power dissipation
JEDEC JEITA TOSHIBA
2-3V1K
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 0.017 g (typ.)
Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
8 7 6 5
Marking (Note 5)
8 7 6 5
8101
1
2
3
4
1
2
3
4
Lot No.
1
2006-11-17
2.80.1
Low drain-source ON-resistance: RDS (ON) = 24 m (typ.)
TPCP8101
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 74.4 148.8 Unit C/W C/W
Note 1: Ensure that the channel temperature does not exceed 150C during use of the device. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -5.6 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: * on the lower left of the marking indicates Pin 1. * Weekly code (three digits): Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
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TPCP8101
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -1.4 A Drain-source ON-resistance RDS (ON) VGS = -2.5 V, ID = -2.8 A VGS = -4.5 V, ID = -2.8 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr ton 0V ID = -2.8 A RL = 3.57 VOUT VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, ID = -2.8 A Min -20 -12 -0.5 7 VDD -16 V, VGS = -5 V, - ID = -5.6 A Typ. 67 36 24 14 1550 215 265 7 13 21 68 19 14 5 Max 10 -10 -1.2 90 41 30 ns nC pF S m Unit A A V V
VGS
-5 V 4.7 Duty < 1%, tw = 10 s = Test Condition
VDD -10 V -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Min Typ. Max -22.4 1.2 Unit A V
Forward voltage (diode)
IDR = -5.6 A, VGS = 0 V
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TPCP8101
ID - VDS
-5 -5 -4.5 -4 -3 -1.6 -2.5 -1.9 -2 -1.8 -10 -1.7 -2.5 -3 -4 -5 -6 -2
ID - VDS
Common source Ta = 25C Pulse test -1.9 -1.8
(A)
ID
Drain current
Drain current
ID
(A)
-4
-3
-8
-1.7 -4 -1.6 -1.5 VGS = -1.4 V 0 0
-2
-1.5
-1
VGS = -1.4 V Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0
-2
0 0
-1
-2
-3
-4
-5
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID - VGS
-10
VDS - VGS
0.5
VDS (V)
ID
(A)
-8
Common source VDS = -10 V Pulse test
Common source Ta = 25C Pulse test
0.4
Drain-source voltage
-6
0.3
Drain current
-4
0.2 ID=5.6A
I
Ta = 25C Ta = -55C Ta = 100C
-2
0.1
2.8A 1.4A 0 2 4 6 8 10
0 0
0 -0.5 -1.0 -1.5 -2.0 -2.5
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| - ID
100 Common source VDS = -10 V Pulse test Ta = 25C 10 Ta = 100C 1000 Common source Ta = 25C Pulse test
RDS (ON) - ID
(S)
|Yfs|
Drain-source ON-resistance RDS (ON) (m)
Ta = -55C
Forward transfer admittance
100
-1.8 V -2.5 V
VGS = -4.5 V 10
1
0.1 -0.1
-1
-10
-100
1 -0.1
-1
-10
-100
Drain current
ID
(A)
Drain current
ID
(A)
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TPCP8101
RDS (ON) - Ta
160 Common source -100 Common source
IDR - VDS (A)
Drain-source ON-resistance RDS (ON) (m)
Pulse test 120
Ta = 25C Pulse test
Drain reverse current
IDR
80 VGS = -1.8 V
-2.8 A ID = -1.4 A -5.6 A ID = -1.4, -2.8 A ID = -1.4, -2.8, -5.6 A
-10
-2.0 V -4 V -1.8 V -1 V
40
-2.5 V
-4.5 V 0 -80 -40 0 40
VGS = 0 V -1 0 0.4 0.8 1.2 1.6 2
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
C - VDS
10000
Vth - Ta
2.0
Ciss
Vth (V)
VGS = 0 V f = 1 MHz Ta = 25C
1.5
Common source VDS = -10 V ID = -200 A Pulse test
(pF)
Gate threshold voltage
1000
C
Capacitance
Coss Crss
1.0
100
0.5
0 -80 10 0.1 1.0 10 100
-40
0
40
80
120
160
Ambient temperature
Ta
(C)
Drain-source voltage
VDS
(V)
2.0
PD - Ta
-20 (1) Device mounted on a
Dynamic input/output characteristics
Common source VDS ID = -5.6 A Ta = 25C Pulse test -12 VGS -4 V VDD = -16 V -4 -8 V -4 -12 -16 -20
(W)
VDS (V)
glass-epoxy board (a) (Note 2a)
PD
1.5
(2) Device mounted on a glass-epoxy board (b)
Drain power dissipation
Drain-source voltage
1.0
(1) DC
(Note 2b)
-8
-8
(2) t = 5 s 0.5 (2) DC
0 0 40 80 120 160
0 0
8
16
24
32
0 40
Ambient temperature
Ta
(C)
Total gate charge
Qg
(nC)
5
2006-11-17
Gate-source voltage
VGS
-16
(V)
(1) t = 5 s
TPCP8101
rth(j-c) - tw (C/W)
1000 Device mounted on a glassepoxy board (b) (Note 2b) 100 Device mounted on a glassepoxy board (a) (Note 2a) 10
Transient thermal impedance
rth
Single pulse 1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(s)
Safe operating area
- 100
ID max (pulse)* 1 ms*
(A) ID
- 10 10 ms*
Drain current
-1 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly with increase in temperature. -1 - 10
- 0.1
VDSS max - 100
- 0.1
Drain-sour
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TPCP8101
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2006-11-17

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